inchange semiconductor product specification silicon npn power transistors 2SD1197 description ? with to-3pn package ? high dc current gain. ? large current capacity and wide aso. ? low saturation voltage ? darlington ? complement to type 2sb887 applications ? motor drivers, printer hammer drivers, relay drivers,voltage regulator control. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 110 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 6 v i c collector current (dc) 10 a i cp collector current (pulse) 15 a p c collector power dissipation t c =25 ?? 70 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1197 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ;r be = 100 v v (br)cbo collector-base breakdown voltage i c =5ma ;i e =0 110 v v cesat collector-emitter saturation voltage i c =5a; i b =10ma 0.9 1.5 v v besat base-emitter saturation voltage i c =5a; i b =10ma 2.0 v i cbo collector cut-off current v cb =80v; i e =0 0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 3.0 ma h fe dc current gain i c =5a ; v ce =3v 1500 4000 f t transition frequency i c =5a ; v ce =5v 20 mhz
inchange semiconductor product specification 3 silicon npn power transistors 2SD1197 package outline fig.2 outline dimensions
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